Starpower GD600HFY120P1S Dual IGBT Module, 600 A 1200 V, 10-Pin Module
- N° de stock RS:
- 427-726
- Référence fabricant:
- GD600HFY120P1S
- Fabricant:
- Starpower
Sous-total (1 unité)*
270,14 €
(TVA exclue)
326,87 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité |
|---|---|
| 1 + | 270,14 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 427-726
- Référence fabricant:
- GD600HFY120P1S
- Fabricant:
- Starpower
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Starpower | |
| Maximum Continuous Collector Current Ic | 600A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 3.1kW | |
| Package Type | Module | |
| Configuration | Dual | |
| Pin Count | 10 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.15V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Starpower | ||
Maximum Continuous Collector Current Ic 600A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 3.1kW | ||
Package Type Module | ||
Configuration Dual | ||
Pin Count 10 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.15V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Starpower IGBT Power Module provides ultralow conduction loss as well as short circuit ruggedness. They are designed for the applications such as electric vehicle and solar power.
Maximum junction temperature 175°C
VCE(sat) with positive temperature coefficient
Low inductance case
High power and thermal cycling capability
Isolated copper baseplate using DBC technology
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