Renesas Electronics HIP2100IBZT MOSFET Gate Driver, 2 A 8-Pin 14 V, SOIC-8
- N° de stock RS:
- 263-6913
- Référence fabricant:
- HIP2100IBZT
- Fabricant:
- Renesas Electronics
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
5,08 €
(TVA exclue)
6,14 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Dernier stock RS
- 2 398 dernière(s) unité(s), prête(s) à l'envoi d'un autre centre de distribution
Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 48 | 2,54 € | 5,08 € |
| 50 - 98 | 2,47 € | 4,94 € |
| 100 - 248 | 2,405 € | 4,81 € |
| 250 - 998 | 2,345 € | 4,69 € |
| 1000 + | 2,285 € | 4,57 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 263-6913
- Référence fabricant:
- HIP2100IBZT
- Fabricant:
- Renesas Electronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Renesas Electronics | |
| Product Type | MOSFET | |
| Output Current | 2A | |
| Pin Count | 8 | |
| Package Type | SOIC-8 | |
| Fall Time | 10ns | |
| Driver Type | MOSFET | |
| Rise Time | 20ns | |
| Minimum Supply Voltage | 9V | |
| Maximum Supply Voltage | 14V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Series | HIP2100 | |
| Standards/Approvals | RoHS | |
| Height | 1.7mm | |
| Length | 4.98mm | |
| Width | 3.99 mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Renesas Electronics | ||
Product Type MOSFET | ||
Output Current 2A | ||
Pin Count 8 | ||
Package Type SOIC-8 | ||
Fall Time 10ns | ||
Driver Type MOSFET | ||
Rise Time 20ns | ||
Minimum Supply Voltage 9V | ||
Maximum Supply Voltage 14V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Series HIP2100 | ||
Standards/Approvals RoHS | ||
Height 1.7mm | ||
Length 4.98mm | ||
Width 3.99 mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Renesas Electronics low cost, high frequency half bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low.
Fast propagation times for multi-MHz circuits
CMOS input thresholds for improved noise immunity
Independent inputs for non half bridge topologies
No start up problems
Liens connexes
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