Infineon IR2110STRPBF MOSFET Gate Driver 2, 2 A 16-Pin 20 V, SOIC

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Sous-total (1 paquet de 2 unités)*

6,07 €

(TVA exclue)

7,344 €

(TVA incluse)

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Unité
Prix par unité
le paquet*
2 - 183,035 €6,07 €
20 - 482,58 €5,16 €
50 - 982,43 €4,86 €
100 - 1982,245 €4,49 €
200 +2,095 €4,19 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
260-5181
Référence fabricant:
IR2110STRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

MOSFET

Output Current

2A

Pin Count

16

Package Type

SOIC

Fall Time

17ns

Driver Type

MOSFET

Rise Time

35ns

Minimum Supply Voltage

20V

Maximum Supply Voltage

20V

Number of Drivers

2

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Series

IR2110/IR2113

Mount Type

Surface

Automotive Standard

No

Distrelec Product Id

304-41-658

Infineon MOSFET Gate Driver, 2.5A Output Current, 20V Supply Voltage - IR2110STRPBF


This MOSFET gate driver is designed for high-speed operation in various applications, featuring a dual output configuration. It is housed in a compact 16-lead SOIC package with advanced capabilities to handle high and low side driving functions. Ideal for applications needing robust performance, it operates at a supply voltage range of 10V to 20V.

Features & Benefits


• Floating channel allows straightforward bootstrap operation

• Logic input compatible with both CMOS and LSTTL levels

• Includes undervoltage lockout feature for increased reliability

• High current output stage delivers up to 2.5A for driving demands

• Matched propagation delay simplifies high-frequency circuit designs

Applications


• Utilised in electric motor drives for precise control

• Can be integrated in inverter and converter circuits

• Suitable for power management in industrial automation

• Effective in power supply designs requiring efficient switching

• Effective for high-frequency PWM in electronics

What is the significance of the floating channel in this device?


The floating channel enables driving N-channel MOSFETs or IGBTs in high-side configurations, allowing flexible circuit designs and eliminating the need for isolated drivers.

How does the undervoltage lockout feature enhance performance?


This feature prevents the device from operating under low supply conditions, protecting components and ensuring stable operation during transient events.

What are the typical rise and fall times for this driver?


The typical rise time is approximately 25ns and the fall time is around 17ns, ensuring efficient switching and high-frequency performance in applications.

Can it be used in applications requiring high voltage?


Yes, it operates effectively at voltages up to 500V, making it suitable for high-voltage applications such as motor control and power inverter circuits.

What makes this driver appropriate for automation systems?


Its dual output configuration, combined with compatibility for logic levels down to 3.3V, makes it ideal for interfacing with various automation controllers.

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