Références fabricant

Infineon IR2010STRPBF MOSFET Gate Driver, 3 A 16-Pin 200V, SOIC

N° de stock RS:: 226-6147
Référence fabricant:: IR2010STRPBF
Fabricant:: Infineon

Infineon IR2010STRPBF MOSFET Gate Driver, 3 A 16-Pin 200V, SOIC

Sous-total (1 bobine de 1000 unités)*

1 797,00 €

(TVA exclue)

2 174,00 €

(TVA incluse)

Frais de livraison offerts pour toute commande de plus de 90,00 €

Temporairement en rupture de stock

Expédition à partir du 26 février 2027

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Unité	Prix par unité	la bobine*
1000 +	1,797 €	1 797,00 €

*Prix donné à titre indicatif

N° de stock RS:: 226-6147
Référence fabricant:: IR2010STRPBF
Fabricant:: Infineon

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Détails du produit

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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Product Type	Power MOSFET & IGBT Driver
	Output Current	3A
	Pin Count	16
	Fall Time	25ns
	Package Type	SOIC
	Number of Outputs	2
	Driver Type	MOSFET
	Rise Time	10ns
	Minimum Supply Voltage	10V
	Maximum Supply Voltage	200V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	150°C
	Series	IR2010(S)PBF
	Standards/Approvals	No
	Width	7.6mm
	Length	10.5mm
	Height	2.65mm
	Mount Type	Surface
	Automotive Standard	No

	Sélectionner tout
	Marque Infineon
	Product Type Power MOSFET & IGBT Driver
	Output Current 3A
	Pin Count 16
	Fall Time 25ns
	Package Type SOIC
	Number of Outputs 2
	Driver Type MOSFET
	Rise Time 10ns
	Minimum Supply Voltage 10V
	Maximum Supply Voltage 200V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 150°C
	Series IR2010(S)PBF
	Standards/Approvals No
	Width 7.6mm
	Length 10.5mm
	Height 2.65mm
	Mount Type Surface
	Automotive Standard No

Datasheet - IR2010STRPBF

Infineon IR2010(S)PBF Series Power MOSFET & IGBT Driver, 10V Minimum Supply Voltage, 3A Output Current - IR2010STRPBF

This power MOSFET & IGBT driver is a dual-channel gate driver IC designed to drive power MOSFETs and IGBTs in high-voltage switching applications. It operates within industrial temperature extremes and supports use in surface-mounted assemblies, providing controlled gate drive currents and fast switching performance for power electronics systems.

Features and Benefits:

• Dual outputs deliver 3A Peak drive current for Faster switching
• 10V minimum supply enables operation from common gate rails
• 10ns rise time reduces transition losses during turn-on
• 25ns fall time limits switching stress on transistors
• 200V maximum supply provides high-voltage gate drive capability
• 16-pin SOIC package allows Compact surface mounting

Applications

• Suitable for gate driving in inverter power stages
• Ideal for high-voltage switch control in converters
• Used with discrete MOSFET arrays in motor drives
• Can be used for IGBT gate control in power supplies
• Suitable for Compact surface-mounted power modules

What temperature range can it operate within?

It functions across a wide ambient range from -55°C to 150°C, supporting deployment in thermally demanding environments.

What package and mounting style does it use?

The device is supplied in a 16-pin SOIC package intended for surface-mount assembly on PCBs.

How does its pin count affect PCB layout?

The 16-pin arrangement provides separate pins for dual outputs and control inputs, simplifying routing for isolated gate signals.

What physical profile should designers allow for height constraints?

The component has a total height of 2.65 mm, which should be considered when planning component stacking and enclosure clearances.

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