Infineon MOSFET Gate Driver, 20 A 25-Pin 16 V, PQFN
- N° de stock RS:
- 258-4041
- Référence fabricant:
- TDA21520AUMA1
- Fabricant:
- Infineon
Sous-total (1 bobine de 6000 unités)*
9 318,00 €
(TVA exclue)
11 274,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 mai 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 6000 + | 1,553 € | 9 318,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-4041
- Référence fabricant:
- TDA21520AUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 20A | |
| Pin Count | 25 | |
| Package Type | PQFN | |
| Driver Type | MOSFET | |
| Minimum Supply Voltage | 4.25V | |
| Maximum Supply Voltage | 16V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Height | 0.9mm | |
| Series | TDA21520 | |
| Length | 4mm | |
| Width | 5 mm | |
| Standards/Approvals | Lead free RoHS package | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Gate Driver | ||
Output Current 20A | ||
Pin Count 25 | ||
Package Type PQFN | ||
Driver Type MOSFET | ||
Minimum Supply Voltage 4.25V | ||
Maximum Supply Voltage 16V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Height 0.9mm | ||
Series TDA21520 | ||
Length 4mm | ||
Width 5 mm | ||
Standards/Approvals Lead free RoHS package | ||
Automotive Standard No | ||
The Infineon OptiMOS power stage is integrated power-stage contains a low quiescent current synchronous buck gate-driver IC which is co-packed with control and synchronous MOSFETs along with an active diode structure that achieves low Vsd similar to a Schottky with very little reverse recovery charge. The package is optimized for PCB layout, heat transfer, driver/MOSFET control timing, and minimal switch node ringing when layout guidelines are followed. The paired gate driver and MOSFET combination enables higher efficiency at lower output voltages. The internal MOSFET sensing achieves superior current sense accuracy vs best-in-class controller-based Inductor DCR sense methods.
High-side MOSFET short detection and flag
Thermal shutdown
Cycle-by-cycle over current protection and fault flag
Auto-sleep and deep-sleep mode for power saving
Compatible with 3.3-V tristate PWM input
Accurate current reporting to improve system level performance
Current and temperature fault monitoring for a more robust system
Liens connexes
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