Infineon IR35412MTRPBFAUMA1 MOSFET Gate Driver, 50 A 16 V, PQFN

Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
Options de conditionnement :
N° de stock RS:
219-6035
Référence fabricant:
IR35412MTRPBFAUMA1
Fabricant:
Infineon
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

Infineon

Product Type

MOSFET

Output Current

50A

Package Type

PQFN

Driver Type

MOSFET

Minimum Supply Voltage

4.25V

Maximum Supply Voltage

16V

Standards/Approvals

No

Automotive Standard

No

The Infineon integrated power stage combine the most advanced low voltage MOSFET technology with latest driver design. This integration of driver technology, FET technology and package technology also demonstrates the powerful combination of Infineon and International Rectifier’s capabilities. The dual edge trim dead time leads to a significant improvement in peak efficiency. The internal MOSFET RDS(on) current sensing (via dedicated Kelvin GND connection) with integrated temperature compensation achieves superior current sense accuracy versus inductor DCR sense methods.

Small 5 x 6 x 0.9 mm³ overmolded PQFN package, 0.45 mm pitch

Highly accurate current reporting

Programmable constant current limit OCSET

Fast switching technology for improved performance at higher frequency, better peak efficiency

Input voltage range 4.25 V to 16 V

Output voltage range from 0.25 V up to 5.5 V

Output current capability of 50A

Operation up to 1.5 MHz

Optimized for 5 V drive

Liens connexes