Infineon, Gate Driver 625 V, SOIC-14N
- N° de stock RS:
- 258-4012P
- Référence fabricant:
- IRS21834STRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total 20 unités (conditionné en bande continue)*
31,80 €
(TVA exclue)
38,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 4 996 unité(s) expédiée(s) à partir du 16 décembre 2025
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Unité | Prix par unité |
|---|---|
| 20 - 48 | 1,59 € |
| 50 - 98 | 1,495 € |
| 100 - 198 | 1,38 € |
| 200 + | 1,285 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-4012P
- Référence fabricant:
- IRS21834STRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Gate Driver Module | |
| Fall Time | 35ns | |
| Package Type | SOIC-14N | |
| Driver Type | Gate Driver | |
| Rise Time | 40ns | |
| Minimum Supply Voltage | 3.3V | |
| Maximum Supply Voltage | 625V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Gate Driver Module | ||
Fall Time 35ns | ||
Package Type SOIC-14N | ||
Driver Type Gate Driver | ||
Rise Time 40ns | ||
Minimum Supply Voltage 3.3V | ||
Maximum Supply Voltage 625V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon half bridge driver are high voltage, high speed power MOSFET and IGBT drivers with dependent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.
Gate drive supply range from 10 V to 20 V
Under voltage lockout for both channels
3.3 V and 5 V input logic compatible
Matched propagation delay for both channels
Logic and power ground +/- 5 V offset
Lower di/dt gate driver for better noise immunity
Output source/sink current capability 1.4 A/1.8 A
RoHS compliant