Infineon High Side Gate Driver, 1.8 A 8-Pin 600 V, SOIC

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Sous-total (1 bobine de 2500 unités)*

1 690,00 €

(TVA exclue)

2 045,00 €

(TVA incluse)

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  • Expédition à partir du 13 mai 2026
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Unité
Prix par unité
la bobine*
2500 +0,676 €1 690,00 €

*Prix donné à titre indicatif

N° de stock RS:
258-4009
Référence fabricant:
IRS2181STRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

Gate Driver Module

Output Current

1.8A

Pin Count

8

Fall Time

20ns

Package Type

SOIC

Driver Type

High Side

Rise Time

60ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-50°C

Maximum Operating Temperature

150°C

Series

IRS

Standards/Approvals

RoHS Compliant

Automotive Standard

No

The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V.

Floating channel designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

Matched propagation delay for both channels

Logic and power ground +/- 5 V offset

Lower di/dt gate driver for better noise immunity

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