Infineon IRS2181SPBF High Side Gate Driver, 2.3 A 8-Pin 600 V, SOIC

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Offre groupée disponible

Sous-total (1 paquet de 2 unités)*

4,42 €

(TVA exclue)

5,34 €

(TVA incluse)

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Temporairement en rupture de stock
  • Expédition à partir du 08 février 2027
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Unité
Prix par unité
le paquet*
2 - 182,21 €4,42 €
20 - 482,015 €4,03 €
50 - 981,90 €3,80 €
100 - 1981,75 €3,50 €
200 +1,64 €3,28 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
257-5862
Référence fabricant:
IRS2181SPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

Gate Driver

Output Current

2.3A

Pin Count

8

Fall Time

20ns

Package Type

SOIC

Driver Type

High Side

Rise Time

60ns

Minimum Supply Voltage

10V

Maximum Supply Voltage

600V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS

Series

IRS

Automotive Standard

No

The Infineon high and low side driver are high voltage, high speed power MOSFET and IGBT drivers with independent high-side and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high-side configuration which operates up to 600 V

Floating channel designed for bootstrap operation

Fully operational to +600 V

Tolerant to negative transient voltage, dV/dt immune

Gate drive supply range from 10 V to 20 V

Under voltage lockout for both channels

33 V and 5 V input logic compatible

Matched propagation delay for both channels

Logic and power ground +/- 5 V offset

Lower di/dt gate driver for better noise immunity

Output source/sink current capability 14 A/18 A

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