Infineon, Gate Driver, 600 mA 8-Pin 200 V, SOIC
- N° de stock RS:
- 258-4002
- Référence fabricant:
- IRS2008STRPBF
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 bobine de 2500 unités)*
907,50 €
(TVA exclue)
1 097,50 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 15 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 2500 - 2500 | 0,363 € | 907,50 € |
| 5000 + | 0,345 € | 862,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 258-4002
- Référence fabricant:
- IRS2008STRPBF
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 600mA | |
| Pin Count | 8 | |
| Fall Time | 30ns | |
| Package Type | SOIC | |
| Driver Type | Gate Driver | |
| Rise Time | 170ns | |
| Minimum Supply Voltage | 25V | |
| Maximum Supply Voltage | 200V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS Compliant | |
| Series | IRS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Gate Driver Module | ||
Output Current 600mA | ||
Pin Count 8 | ||
Fall Time 30ns | ||
Package Type SOIC | ||
Driver Type Gate Driver | ||
Rise Time 170ns | ||
Minimum Supply Voltage 25V | ||
Maximum Supply Voltage 200V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS Compliant | ||
Series IRS | ||
Automotive Standard No | ||
The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVICs use in high frequency applications.
Gate drive supplies up to 20 V per channel
Under voltage lockout for VCC, VBS
Tolerant to negative transient voltage
Designed for use with bootstrap power supplies
Cross-conduction prevention logic
Matched propagation delay for both channels
Internal set dead time
High-side output in phase with input
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