Infineon, Gate Driver, 600 mA 8-Pin 200 V, SOIC

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Sous-total (1 bobine de 2500 unités)*

907,50 €

(TVA exclue)

1 097,50 €

(TVA incluse)

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  • Expédition à partir du 14 mai 2026
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Unité
Prix par unité
la bobine*
2500 - 25000,363 €907,50 €
5000 +0,345 €862,50 €

*Prix donné à titre indicatif

N° de stock RS:
258-4002
Référence fabricant:
IRS2008STRPBF
Fabricant:
Infineon
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Marque

Infineon

Product Type

Gate Driver Module

Output Current

600mA

Pin Count

8

Package Type

SOIC

Fall Time

30ns

Driver Type

Gate Driver

Rise Time

170ns

Minimum Supply Voltage

25V

Maximum Supply Voltage

200V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

RoHS Compliant

Series

IRS

Automotive Standard

No

The Infineon half-bridge driver is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.

Gate drive supplies up to 20 V per channel

Under voltage lockout for VCC, VBS

Tolerant to negative transient voltage

Designed for use with bootstrap power supplies

Cross-conduction prevention logic

Matched propagation delay for both channels

Internal set dead time

High-side output in phase with input

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