onsemi NCV57091BDWR2G MOSFET Gate Driver, 6.5 A 8-Pin 22 V, SOIC

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Sous-total (1 unité)*

4,36 €

(TVA exclue)

5,28 €

(TVA incluse)

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N° de stock RS:
244-9171
Référence fabricant:
NCV57091BDWR2G
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Output Current

6.5A

Pin Count

8

Fall Time

13ns

Package Type

SOIC

Driver Type

MOSFET

Rise Time

30ns

Minimum Supply Voltage

22V

Maximum Supply Voltage

22V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

150°C

Standards/Approvals

No

Series

NCV57

Mount Type

PCB

Automotive Standard

No

The ON Semiconductor Gate Driver are isolated dual−channel gate drivers with 4.5−A/9−A source and sink peak current respectively. They are designed for fast switching to drive power MOSFETs, and SiC MOSFET power switches. The NCP51561 offers short and matched propagation delays. Two independent and 5 kVrms internal galvanic isolation from input to each output and internal functional isolation between the two output drivers allows a working voltage of up to 1500 VDC. This driver can be used in any possible configurations of two low side, two high−side switches or a half−bridge driver with programmable dead time. An ENA/DIS pin shutdowns both outputs simultaneously when set low or high for ENABLE or DISABLE mode respectively. The NCP51561 offers other important protection functions such as independent under−voltage lockout for both gate drivers and a Dead Time adjustment function.

4.5 A Peak Source, 9 A Peak Sink Output Current Capability

Flexible: Dual Low−Side, Dual High−Side or Half−Bridge Gate Driver

Independent UVLO Protections for Both Output Drivers

Output Supply Voltage from 6.5 V to 30 V with 5−V and 8−V for MOSFET, 13−V and 17−V UVLO for SiC, Thresholds.

Common Mode Transient Immunity CMTI > 200 V/ns

Propagation Delay Typical 36 ns with 5 ns Max Delay Matching per Channel and 5 ns Max Pulse−Width Distortion

User Programmable Input Logic Single or Dual−Input Modes via ANB and ENABLE or DISABLE Mode

User Programmable Dead−Time

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