onsemi NCD57090FDWR2G MOSFET Gate Driver 1, 6.5 A 8-Pin 22V, SOIC

Voir l’ensemble des Gate Drivers

Sous-total (1 bobine de 1000 unités)*

1 368,00 €

(TVA exclue)

1 655,00 €

(TVA incluse)

Add to Basket
sélectionner ou taper la quantité
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité
Prix par unité
la bobine*
1000 +1,368 €1 368,00 €

*Prix donné à titre indicatif

N° de stock RS:
233-6802
Référence fabricant:
NCD57090FDWR2G
Fabricant:
onsemi
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout

Marque

onsemi

Product Type

MOSFET

Output Current

6.5A

Pin Count

8

Package Type

SOIC

Fall Time

13ns

Number of Outputs

5

Driver Type

MOSFET

Minimum Supply Voltage

22V

Number of Drivers

1

Maximum Supply Voltage

22V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Length

5mm

Height

1.75mm

Series

NCD57090

Standards/Approvals

No

Width

4mm

Mount Type

Surface

Automotive Standard

AEC-Q100

The ON Semiconductor NCD57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

It has High peak output current (+6.5 A/−6.5 A)

It provides short propagation delays with accurate matching

It offers IGBT/MOSFET gate clamping during short circuit

Liens connexes