onsemi MOSFET Gate Driver 1, 6.5 A 8-Pin 22 V, SOIC
- N° de stock RS:
- 233-6802
- Référence fabricant:
- NCD57090FDWR2G
- Fabricant:
- onsemi
Sous-total (1 bobine de 1000 unités)*
1 368,00 €
(TVA exclue)
1 655,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 18 juin 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1000 + | 1,368 € | 1 368,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 233-6802
- Référence fabricant:
- NCD57090FDWR2G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | MOSFET | |
| Output Current | 6.5A | |
| Pin Count | 8 | |
| Fall Time | 13ns | |
| Package Type | SOIC | |
| Number of Outputs | 5 | |
| Driver Type | MOSFET | |
| Minimum Supply Voltage | 22V | |
| Number of Drivers | 1 | |
| Maximum Supply Voltage | 22V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 5mm | |
| Height | 1.75mm | |
| Width | 4 mm | |
| Series | NCD57090 | |
| Mount Type | Surface | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type MOSFET | ||
Output Current 6.5A | ||
Pin Count 8 | ||
Fall Time 13ns | ||
Package Type SOIC | ||
Number of Outputs 5 | ||
Driver Type MOSFET | ||
Minimum Supply Voltage 22V | ||
Number of Drivers 1 | ||
Maximum Supply Voltage 22V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 5mm | ||
Height 1.75mm | ||
Width 4 mm | ||
Series NCD57090 | ||
Mount Type Surface | ||
Automotive Standard AEC-Q100 | ||
The ON Semiconductor NCD57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.
It has High peak output current (+6.5 A/−6.5 A)
It provides short propagation delays with accurate matching
It offers IGBT/MOSFET gate clamping during short circuit
Liens connexes
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