onsemi MOSFET Gate Driver 1, 6.5 A 8-Pin 22 V, SOIC

Sous-total (1 bobine de 1000 unités)*

1 368,00 €

(TVA exclue)

1 655,00 €

(TVA incluse)

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  • Expédition à partir du 18 juin 2026
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Unité
Prix par unité
la bobine*
1000 +1,368 €1 368,00 €

*Prix donné à titre indicatif

N° de stock RS:
233-6802
Référence fabricant:
NCD57090FDWR2G
Fabricant:
onsemi
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Marque

onsemi

Product Type

MOSFET

Output Current

6.5A

Pin Count

8

Fall Time

13ns

Package Type

SOIC

Number of Outputs

5

Driver Type

MOSFET

Minimum Supply Voltage

22V

Number of Drivers

1

Maximum Supply Voltage

22V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

125°C

Standards/Approvals

No

Length

5mm

Height

1.75mm

Width

4 mm

Series

NCD57090

Mount Type

Surface

Automotive Standard

AEC-Q100

The ON Semiconductor NCD57090FDWR2G is a high−current single channel IGBT/MOSFET gate drivers with 5 kVrms internal galvanic isolation, designed for high system efficiency and reliability in high power applications. The devices accept complementary inputs and depending on the pin configuration, offer options such as Active Miller Clamp for system design convenience. It has a low Clamp voltage drop that eliminates the need of negative power supply to prevent spurious gate turn−on. The driver accommodate wide range of input bias voltage and signal levels from 3.3 V to 20 V and they are available in wide−body SOIC−8 package.

It has High peak output current (+6.5 A/−6.5 A)

It provides short propagation delays with accurate matching

It offers IGBT/MOSFET gate clamping during short circuit

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