Infineon 6ED2230S12TXUMA1 MOSFET Gate Driver 6, 350 mA 24-Pin 20V, DSO
- N° de stock RS:
- 226-6040
- Référence fabricant:
- 6ED2230S12TXUMA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 unité)*
4,14 €
(TVA exclue)
5,01 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
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- 917 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 4 | 4,14 € |
| 5 - 9 | 3,72 € |
| 10 - 24 | 3,47 € |
| 25 - 49 | 3,26 € |
| 50 + | 3,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 226-6040
- Référence fabricant:
- 6ED2230S12TXUMA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | MOSFET | |
| Output Current | 350mA | |
| Pin Count | 24 | |
| Fall Time | 20ns | |
| Package Type | DSO | |
| Number of Outputs | 4 | |
| Driver Type | MOSFET | |
| Rise Time | 35ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 6 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 150°C | |
| Series | 6ED2230S12T | |
| Width | 7.5mm | |
| Standards/Approvals | No | |
| Height | 2.65mm | |
| Length | 18.2mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type MOSFET | ||
Output Current 350mA | ||
Pin Count 24 | ||
Fall Time 20ns | ||
Package Type DSO | ||
Number of Outputs 4 | ||
Driver Type MOSFET | ||
Rise Time 35ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 6 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 150°C | ||
Series 6ED2230S12T | ||
Width 7.5mm | ||
Standards/Approvals No | ||
Height 2.65mm | ||
Length 18.2mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 6ED2230S12T is a high voltage, high speed IGBT with three independent high side and low side referenced output channels for three phase applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or TTL outputs, down to 3.3 V logic. An over‐current protection function which terminates all six outputs can also be derived from this resistor.
Fully operational to +1200 V
Integrated Ultra‐fast Bootstrap Diode
Floating channel designed for bootstrap operation
Output source/sink current capability +0.35 A/‐0.65 A
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