Infineon 256 kB Serial-SPI Serial (SPI) F-RAM 8-Pin, FM25V02A-G
- N° de stock RS:
- 273-7389
- Référence fabricant:
- FM25V02A-G
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
5,94 €
(TVA exclue)
7,19 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 909 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 5,94 € |
| 10 - 24 | 5,38 € |
| 25 - 49 | 5,25 € |
| 50 - 99 | 5,16 € |
| 100 + | 4,78 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7389
- Référence fabricant:
- FM25V02A-G
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 256kB | |
| Product Type | Serial (SPI) F-RAM | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 40MHz | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Number of Words | 32k | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 256kB | ||
Product Type Serial (SPI) F-RAM | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 40MHz | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Number of Words 32k | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
Automotive Standard No | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
The Infineon FRAM is a 256 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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