Infineon 4 kB Serial-SPI FRAM 8-Pin, FM25L04B-G
- N° de stock RS:
- 273-7387
- Référence fabricant:
- FM25L04B-G
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 paquet de 2 unités)*
3,82 €
(TVA exclue)
4,62 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 6 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 2 - 8 | 1,91 € | 3,82 € |
| 10 - 18 | 1,715 € | 3,43 € |
| 20 - 48 | 1,68 € | 3,36 € |
| 50 - 98 | 1,645 € | 3,29 € |
| 100 + | 1,51 € | 3,02 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7387
- Référence fabricant:
- FM25L04B-G
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | FRAM | |
| Memory Size | 4kB | |
| Interface Type | Serial-SPI | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 20MHz | |
| Pin Count | 8 | |
| Standards/Approvals | Restriction of hazardous substances (RoHS) | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Number of Words | 512 | |
| Minimum Operating Temperature | 40°C | |
| Automotive Standard | No | |
| Number of Bits per Word | 8 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type FRAM | ||
Memory Size 4kB | ||
Interface Type Serial-SPI | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 20MHz | ||
Pin Count 8 | ||
Standards/Approvals Restriction of hazardous substances (RoHS) | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Number of Words 512 | ||
Minimum Operating Temperature 40°C | ||
Automotive Standard No | ||
Number of Bits per Word 8 | ||
The Infineon FRAM is a 4 Kbit non volatile memory employing an Advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM and other non volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Very fast serial peripheral Interface
Sophisticated write protection scheme
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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