Infineon 64 kB SPI FRAM 8-Pin SOIC, FM25CL64B-G

Offre groupée disponible

Sous-total (1 paquet de 2 unités)*

5,69 €

(TVA exclue)

6,884 €

(TVA incluse)

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Temporairement en rupture de stock
  • 2 030 unité(s) expédiée(s) à partir du 01 avril 2026
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Unité
Prix par unité
le paquet*
2 - 82,845 €5,69 €
10 - 482,315 €4,63 €
50 - 982,25 €4,50 €
100 - 4982,02 €4,04 €
500 +1,925 €3,85 €

*Prix donné à titre indicatif

Options de conditionnement :
N° de stock RS:
125-4222
Référence fabricant:
FM25CL64B-G
Fabricant:
Infineon
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Marque

Infineon

Memory Size

64kB

Product Type

FRAM

Organisation

8K x 8 bit

Interface Type

SPI

Data Bus Width

8bit

Maximum Random Access Time

20ns

Maximum Clock Frequency

20MHz

Mount Type

Surface

Package Type

SOIC

Pin Count

8

Width

4 mm

Length

4.5mm

Standards/Approvals

No

Height

0.75mm

Maximum Operating Temperature

85°C

Minimum Operating Temperature

-40°C

Maximum Supply Voltage

3.65V

Minimum Supply Voltage

2.7V

Automotive Standard

AEC-Q100

Number of Words

8K

Number of Bits per Word

8

FRAM, Cypress Semiconductor


Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory

Fast write speed

High endurance

Low power consumption

FRAM (Ferroelectric RAM)


FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

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