Infineon 512 kB SPI FRAM 8-Pin SOIC
- N° de stock RS:
- 188-5420
- Référence fabricant:
- FM25V05-G
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 97 unités)*
655,332 €
(TVA exclue)
792,975 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 80,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 juillet 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 97 - 97 | 6,756 € | 655,33 € |
| 194 - 194 | 6,02 € | 583,94 € |
| 291 - 485 | 5,783 € | 560,95 € |
| 582 + | 5,662 € | 549,21 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 188-5420
- Référence fabricant:
- FM25V05-G
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 512kB | |
| Product Type | FRAM | |
| Organisation | 64k x 8 Bit | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 18ns | |
| Maximum Clock Frequency | 40MHz | |
| Mount Type | Surface | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Standards/Approvals | No | |
| Length | 4.97mm | |
| Height | 1.38mm | |
| Width | 3.98 mm | |
| Maximum Operating Temperature | 85°C | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2V | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 64K | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 512kB | ||
Product Type FRAM | ||
Organisation 64k x 8 Bit | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 18ns | ||
Maximum Clock Frequency 40MHz | ||
Mount Type Surface | ||
Package Type SOIC | ||
Pin Count 8 | ||
Standards/Approvals No | ||
Length 4.97mm | ||
Height 1.38mm | ||
Width 3.98 mm | ||
Maximum Operating Temperature 85°C | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2V | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
Minimum Operating Temperature -40°C | ||
Number of Words 64K | ||
- Pays d'origine :
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
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