FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

512-Kbit ferroelectric random access memory (F-RAM) logically organized as 64 K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast 2-wire Serial interface (I2C)
Up to 3.4-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID
Manufacturer ID and Product ID
Low power consumption
175 μA active current at 100 kHz
90 μA (typ) standby current
5 μA (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Unité	Prix par unité	le tube*
97 - 97	10,345 €	1 003,47 €
194 - 194	9,873 €	957,68 €
291 - 485	9,62 €	933,14 €
582 +	9,379 €	909,76 €

Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Memory Size	512kbit
	Organisation	64K x 8 bit
	Interface Type	I2C
	Data Bus Width	8bit
	Maximum Random Access Time	450ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	4.97 x 3.98 x 1.48mm
	Length	4.97mm
	Maximum Operating Supply Voltage	3.6 V
	Width	3.98mm
	Height	1.48mm
	Maximum Operating Temperature	+85 °C
	Number of Bits per Word	8bit
	Automotive Standard	AEC-Q100
	Number of Words	64k
	Minimum Operating Temperature	-40 °C
	Minimum Operating Supply Voltage	2 V

	Sélectionner tout
	Marque Infineon
	Memory Size 512kbit
	Organisation 64K x 8 bit
	Interface Type I2C
	Data Bus Width 8bit
	Maximum Random Access Time 450ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 4.97 x 3.98 x 1.48mm
	Length 4.97mm
	Maximum Operating Supply Voltage 3.6 V
	Width 3.98mm
	Height 1.48mm
	Maximum Operating Temperature +85 °C
	Number of Bits per Word 8bit
	Automotive Standard AEC-Q100
	Number of Words 64k
	Minimum Operating Temperature -40 °C
	Minimum Operating Supply Voltage 2 V

Infineon 512kbit I2C FRAM Memory 8-Pin SOIC, FM24V05-G

Frais de livraison offerts pour toute commande de plus de 75,00 €

FRAM, Cypress Semiconductor

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