Infineon 4 kB Serial-I2C (2 Wire) FRAM 8-Pin SOIC, FM24C04B-G
- N° de stock RS:
- 188-5395
- Référence fabricant:
- FM24C04B-G
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 188-5395
- Référence fabricant:
- FM24C04B-G
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 4kB | |
| Product Type | FRAM | |
| Interface Type | Serial-I2C (2 Wire) | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 3000ns | |
| Mount Type | Surface Mount | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Length | 4.97mm | |
| Height | 1.48mm | |
| Maximum Operating Temperature | 85°C | |
| Minimum Operating Temperature | -40°C | |
| Number of Words | 512 | |
| Automotive Standard | AEC-Q100 | |
| Number of Bits per Word | 8 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 4kB | ||
Product Type FRAM | ||
Interface Type Serial-I2C (2 Wire) | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 3000ns | ||
Mount Type Surface Mount | ||
Package Type SOIC | ||
Pin Count 8 | ||
Length 4.97mm | ||
Height 1.48mm | ||
Maximum Operating Temperature 85°C | ||
Minimum Operating Temperature -40°C | ||
Number of Words 512 | ||
Automotive Standard AEC-Q100 | ||
Number of Bits per Word 8 | ||
- Pays d'origine :
- US
FRAM, Cypress Semiconductor
Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.
Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption
FRAM (Ferroelectric RAM)
FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore Ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.
Liens connexes
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