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Sélectionner tout	Attribut	Valeur
	Marque	Infineon
	Memory Size	1Mbit
	Organisation	128K x 8 bit
	Interface Type	Serial-2 Wire, Serial-I2C
	Data Bus Width	8bit
	Maximum Random Access Time	450ns
	Mounting Type	Surface Mount
	Package Type	SOIC
	Pin Count	8
	Dimensions	4.97 x 3.98 x 1.48mm
	Length	4.97mm
	Width	3.98mm
	Maximum Operating Supply Voltage	3.6 V
	Height	1.48mm
	Maximum Operating Temperature	+85 °C
	Automotive Standard	AEC-Q100
	Minimum Operating Supply Voltage	2 V
	Minimum Operating Temperature	-40 °C
	Number of Words	128K
	Number of Bits per Word	8bit

	Sélectionner tout
	Marque Infineon
	Memory Size 1Mbit
	Organisation 128K x 8 bit
	Interface Type Serial-2 Wire, Serial-I2C
	Data Bus Width 8bit
	Maximum Random Access Time 450ns
	Mounting Type Surface Mount
	Package Type SOIC
	Pin Count 8
	Dimensions 4.97 x 3.98 x 1.48mm
	Length 4.97mm
	Width 3.98mm
	Maximum Operating Supply Voltage 3.6 V
	Height 1.48mm
	Maximum Operating Temperature +85 °C
	Automotive Standard AEC-Q100
	Minimum Operating Supply Voltage 2 V
	Minimum Operating Temperature -40 °C
	Number of Words 128K
	Number of Bits per Word 8bit

FRAM, Cypress Semiconductor

Ferroelectric Random Access Memory (F-RAM) is energy-efficient and it has the highest-reliability of the non-volatile RAMs for both serial and parallel interfaces. Parts with suffix A are designed for automotive applications and are AEC-Q100 qualified.

Nonvolatile Ferroelectric RAM Memory
Fast write speed
High endurance
Low power consumption

1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K x 8
High-endurance 100 trillion (1014) read/writes
151-year data retention
NoDelay™ writes
Advanced high-reliability ferroelectric process
Fast two-wire Serial interface (I2C)
Up to 3.4-MHz frequency
Direct hardware replacement for serial (I2C) EEPROM
Supports legacy timings for 100 kHz and 400 kHz
Device ID and Serial Number
Manufacturer ID and Product ID
Unique Serial Number (FM24VN10)
Low power consumption
175 μA active current at 100 kHz
90 μA (typ) standby current
5 μA (typ) sleep mode current
Low-voltage operation: VDD = 2.0 V to 3.6 V
Industrial temperature: –40 °C to +85 °C
8-pin small outline integrated circuit (SOIC) package

FRAM (Ferroelectric RAM)

FRAM (Ferroelectric Random Access Memory) is a non-volatile memory that uses ferroelectric film as a capacitor for storing data. Possessing characteristics of both ROM and RAM devices, F-RAM features high-speed access, high endurance in write mode, low power consumption, non-volatility, and excellent tamper resistance. It is therefore ideal memory for use in smart cards which need high security and low power consumption, as well as cellular phones and other devices.

Unité	Prix par unité
1 - 9	13,78 €
10 - 49	12,36 €
50 - 99	12,04 €
100 - 499	11,72 €
500 +	11,44 €

Infineon 1Mbit Serial-2 Wire, Serial-I2C FRAM Memory 8-Pin SOIC, FM24V10-G

Frais de livraison offerts pour toute commande de plus de 75,00 €

FRAM, Cypress Semiconductor

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