Infineon 1 MB Serial-I2C FRAM 8-Pin SOIC-8, FM24VN10-G
- N° de stock RS:
- 273-7382
- Référence fabricant:
- FM24VN10-G
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 97 unités)*
918,396 €
(TVA exclue)
1 111,232 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 970 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 97 - 97 | 9,468 € | 918,40 € |
| 194 + | 8,42 € | 816,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7382
- Référence fabricant:
- FM24VN10-G
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 1MB | |
| Product Type | FRAM | |
| Organisation | 128k x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 3.4MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Number of Bits per Word | 8 | |
| Minimum Supply Voltage | 2V | |
| Number of Words | 128k | |
| Automotive Standard | No | |
| Minimum Operating Temperature | 40°C | |
| Maximum Supply Voltage | 3.6V | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 1MB | ||
Product Type FRAM | ||
Organisation 128k x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 3.4MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Number of Bits per Word 8 | ||
Minimum Supply Voltage 2V | ||
Number of Words 128k | ||
Automotive Standard No | ||
Minimum Operating Temperature 40°C | ||
Maximum Supply Voltage 3.6V | ||
The Infineon FRAM is a 1 Mbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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