Infineon NOR 512 MB SPI Flash Memory 16-Pin, S25FL512SAGMFIR11
- N° de stock RS:
- 273-7510
- Référence fabricant:
- S25FL512SAGMFIR11
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 47 unités)*
246,985 €
(TVA exclue)
298,873 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- Plus 658 unité(s) expédiée(s) à partir du 31 décembre 2025
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Unité | Prix par unité | le tube* |
|---|---|---|
| 47 - 94 | 5,255 € | 246,99 € |
| 141 + | 5,124 € | 240,83 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7510
- Référence fabricant:
- S25FL512SAGMFIR11
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 512MB | |
| Product Type | Flash Memory | |
| Interface Type | SPI | |
| Pin Count | 16 | |
| Maximum Clock Frequency | 133MHz | |
| Cell Type | NOR | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q1 Grade 1 | |
| Series | S25FL-S | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 512MB | ||
Product Type Flash Memory | ||
Interface Type SPI | ||
Pin Count 16 | ||
Maximum Clock Frequency 133MHz | ||
Cell Type NOR | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q1 Grade 1 | ||
Series S25FL-S | ||
The Infineon Flash Memory offers high densities coupled with the flexibility and fast performance required by a variety of embedded applications. It is Ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called Execute in Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
SPI with multi IO
Advanced sector protection
512 byte page programming buffer
CMOS 3.0 V core with versatile I/O
Minimum 20 year data retention
Minimum 100000 program erase cycles
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