Infineon NOR 128 MB SPI Flash Memory 8-Pin, S25FL128LAGNFV010
- N° de stock RS:
- 273-7485
- Référence fabricant:
- S25FL128LAGNFV010
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 unité)*
1,98 €
(TVA exclue)
2,40 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 440 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité |
|---|---|
| 1 - 9 | 1,98 € |
| 10 - 24 | 1,56 € |
| 25 - 49 | 1,54 € |
| 50 - 99 | 1,50 € |
| 100 + | 1,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7485
- Référence fabricant:
- S25FL128LAGNFV010
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | Flash Memory | |
| Memory Size | 128MB | |
| Interface Type | SPI | |
| Pin Count | 8 | |
| Maximum Clock Frequency | 133MHz | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | DDR | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Supply Current | 40mA | |
| Automotive Standard | AEC-Q100 Grade 1, AEC-Q100 Grade 2, AEC-Q100 Grade 3 | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type Flash Memory | ||
Memory Size 128MB | ||
Interface Type SPI | ||
Pin Count 8 | ||
Maximum Clock Frequency 133MHz | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type DDR | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Supply Current 40mA | ||
Automotive Standard AEC-Q100 Grade 1, AEC-Q100 Grade 2, AEC-Q100 Grade 3 | ||
The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an Ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are Ideal for code shadowing to RAM, executing code directly and storing re programmable data.
Double data rate option
Quad peripheral Interface option
Minimum 20 year data retention
Serial flash discoverable parameters
Minimum 100000 program erase cycles
Clock polarity and phase modes 0 and 3
Liens connexes
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