Infineon NOR 1 GB Parallel GL-T MIRRORBITTM Flash Parallel 48-Pin TSOP-56, S29GL01GT10FHI010
- N° de stock RS:
- 273-5428
- Référence fabricant:
- S29GL01GT10FHI010
- Fabricant:
- Infineon
Sous-total (1 plateau de 180 unités)*
1 846,26 €
(TVA exclue)
2 233,98 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
Temporairement en rupture de stock
- Expédition à partir du 20 avril 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le plateau* |
|---|---|---|
| 180 + | 10,257 € | 1 846,26 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-5428
- Référence fabricant:
- S29GL01GT10FHI010
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 1GB | |
| Product Type | GL-T MIRRORBITTM Flash Parallel | |
| Interface Type | Parallel | |
| Package Type | TSOP-56 | |
| Pin Count | 48 | |
| Organisation | 120MB | |
| Maximum Clock Frequency | 5MHz | |
| Cell Type | NOR | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Series | S29GL | |
| Automotive Standard | AEC-Q100 Grade 2 & 3 | |
| Supply Current | 100mA | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 130ns | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 1GB | ||
Product Type GL-T MIRRORBITTM Flash Parallel | ||
Interface Type Parallel | ||
Package Type TSOP-56 | ||
Pin Count 48 | ||
Organisation 120MB | ||
Maximum Clock Frequency 5MHz | ||
Cell Type NOR | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Series S29GL | ||
Automotive Standard AEC-Q100 Grade 2 & 3 | ||
Supply Current 100mA | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 130ns | ||
The Infineon Flash Memory is fabricated on 45 nm process technology. These devices offer a fast page access time as fast as 15 ns, with a corresponding random access time as fast as 100 ns. They feature a write buffer that allows a maximum of 256 words or 512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms.
20 year data retention
Advanced sector protection
512 byte programming buffer
100000 program and erase cycles
Asynchronous 32 byte page read
Common flash interface parameter table
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