Infineon NOR 128 MB SPI Flash SPI Multi-I/O 8-Pin WSON, S25FL127SABMFI103
- N° de stock RS:
- 273-5369
- Référence fabricant:
- S25FL127SABMFI103
- Fabricant:
- Infineon
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 273-5369
- Référence fabricant:
- S25FL127SABMFI103
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 128MB | |
| Product Type | Flash SPI Multi-I/O | |
| Interface Type | SPI | |
| Package Type | WSON | |
| Pin Count | 8 | |
| Organisation | 16MB | |
| Maximum Clock Frequency | 108MHz | |
| Cell Type | NOR | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 105°C | |
| Standards/Approvals | No | |
| Automotive Standard | AEC-Q100 Grade 2, AEC-Q100 Grade 3 | |
| Series | S25FL127S | |
| Supply Current | 50mA | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 128MB | ||
Product Type Flash SPI Multi-I/O | ||
Interface Type SPI | ||
Package Type WSON | ||
Pin Count 8 | ||
Organisation 16MB | ||
Maximum Clock Frequency 108MHz | ||
Cell Type NOR | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 105°C | ||
Standards/Approvals No | ||
Automotive Standard AEC-Q100 Grade 2, AEC-Q100 Grade 3 | ||
Series S25FL127S | ||
Supply Current 50mA | ||
- Pays d'origine :
- CN
The Infineon Flash Memory offers a high density coupled with the flexibility and fast performance required by a variety of embedded applications. It is Ideal for code shadowing, XIP and data storage. Executing code directly from flash memory is often called execute in Place. By using FL S devices at the higher clock rates supported, with QIO command, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically.
Advance sector protection
Minimum 20 year data retention
CMOS 3.0 V core with versatile IO
Hardware and software control options
Minimum 100000 program erase cycles
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