Références fabricant

Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39LF040-55-4C-NHE

N° de stock RS:: 145-9101
Référence fabricant:: SST39LF040-55-4C-NHE
Fabricant:: Microchip

Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39LF040-55-4C-NHE

Offre groupée disponible

Sous-total (1 tube de 30 unités)*

70,56 €

(TVA exclue)

85,38 €

(TVA incluse)

Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard

Unité	Prix par unité	le tube*
30 - 90	2,352 €	70,56 €
120 +	2,242 €	67,26 €

*Prix donné à titre indicatif

N° de stock RS:: 145-9101
Référence fabricant:: SST39LF040-55-4C-NHE
Fabricant:: Microchip

Spécifications

Documentation technique

Législations et de normes

Détails du produit

Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.

Sélectionner tout	Attribut	Valeur
	Marque	Microchip
	Product Type	Flash Memory
	Memory Size	4MB
	Interface Type	Parallel
	Package Type	PLCC
	Pin Count	32
	Mount Type	Surface Mount
	Cell Type	Split Gate
	Minimum Operating Temperature	0°C
	Maximum Operating Temperature	70°C
	Length	13.97mm
	Height	2.79mm
	Number of Bits per Word	8
	Number of Words	512K
	Series	SST39
	Maximum Random Access Time	55ns

	Sélectionner tout
	Marque Microchip
	Product Type Flash Memory
	Memory Size 4MB
	Interface Type Parallel
	Package Type PLCC
	Pin Count 32
	Mount Type Surface Mount
	Cell Type Split Gate
	Minimum Operating Temperature 0°C
	Maximum Operating Temperature 70°C
	Length 13.97mm
	Height 2.79mm
	Number of Bits per Word 8
	Number of Words 512K
	Series SST39
	Maximum Random Access Time 55ns

Pays d'origine :: PH

SST39LF010/020/040 Parallel SuperFlash® Memory

The SST39LF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs.

Features

3.0-3.6V Read and Write Operations

Endurance – 100,000 cycles (typical)

Low Power Consumption - Active Current 5 mA, Standby Current 1 μA (typical values at 14 MHz)

Sector-Erase Capability – Uniform 4 Kbyte sectors

Read Access Time – 55 ns

Sector-Erase Time 18 MS

Chip-Erase Time: 70 MS (typical)

Byte-Program Time – 14 μs (typical)

Chip Rewrite Time – SST39LF010 2 seconds, SST39SF020 4 seconds, SST39SF040 8 seconds (typical values)

Latched Address and Data

Automatic Write Timing – Internal V_PP Generation

End-of-Write Detection – Toggle Bit – Data# Polling

CMOS I/O Compatibility

JEDEC Standard– Flash EEPROM Pinouts and Command Sets

Microchip Split Gate 4 MB Parallel Flash Memory 32-Pin PLCC, SST39LF040-55-4C-NHE

SST39LF010/020/040 Parallel SuperFlash® Memory

Features

Flash Memory, Microchip

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