onsemi AFGHL50T65SQDC Bipolar Transistor, 100 A NPN, 650 V, 3-Pin TO-247
- N° de stock RS:
- 195-2573
- Référence fabricant:
- AFGHL50T65SQDC
- Fabricant:
- onsemi
Sous-total (1 tube de 30 unités)*
195,93 €
(TVA exclue)
237,09 €
(TVA incluse)
Informations sur le stock actuellement non accessibles - Veuillez vérifier plus tard
Unité | Prix par unité | le tube* |
|---|---|---|
| 30 + | 6,531 € | 195,93 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 195-2573
- Référence fabricant:
- AFGHL50T65SQDC
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 100A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Power Dissipation Pd | 238W | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | 175°C | |
| Pin Count | 3 | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Series | AFGHL50T65SQDC | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 100A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Power Dissipation Pd 238W | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature 175°C | ||
Pin Count 3 | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Series AFGHL50T65SQDC | ||
Automotive Standard AEC-Q101 | ||
Using novel field stop IGBT and SiC SBD technology, ON semiconductor's new series of hybrid IGBTs offer the optimum performance for hard switching application. The device co-packages a silicon-based IGBT with a SiC Schottky barrier diode, resulting in an excellent tradeoff between the lower performance of silicon-based solutions and the higher cost of entirely SiC-based solutions.
Copacked with SiC schottky barrier diode
Ultra low reverse recovery loss
Maximum Junction Temperature, Tj=175°C
Higher reliability
Very low switching and conduction losses
Positive temperature co-efficient
Tight parameter distribution
Applications
Automotive
Industrial Inverter
DC-DC Converter
PFC, Totem Pole Bridgeless
Hard Switching
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