onsemi FDA38N30 Digital Transistor N-Channel Through Hole TO-3P, 3-Pin
- N° de stock RS:
- 186-8119
- Référence fabricant:
- FDA38N30
- Fabricant:
- onsemi
Sous-total (1 paquet de 5 unités)*
17,10 €
(TVA exclue)
20,70 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 280 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le paquet* |
|---|---|---|
| 5 + | 3,42 € | 17,10 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 186-8119
- Référence fabricant:
- FDA38N30
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Digital Transistor | |
| Package Type | TO-3P | |
| Mount Type | Through Hole | |
| Maximum Power Dissipation Pd | 312W | |
| Transistor Polarity | N-Channel | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | RoHS | |
| Height | 18.9mm | |
| Series | UniFETTM MOSFET | |
| Length | 16.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Digital Transistor | ||
Package Type TO-3P | ||
Mount Type Through Hole | ||
Maximum Power Dissipation Pd 312W | ||
Transistor Polarity N-Channel | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals RoHS | ||
Height 18.9mm | ||
Series UniFETTM MOSFET | ||
Length 16.2mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
UniFETTM MOSFET is a high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
RDS(on) = 70mΩ ( Typ.)@ VGS = 10V, ID = 19A
Low gate charge ( Typ. 60nC)
Low Crss ( Typ. 60pF)
ESD improved capability
Applications
This product is general usage and suitable for many different applications.
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