onsemi MJE200G Transistor, 10 A NPN, 40 V, 3-Pin TO-225
- N° de stock RS:
- 184-4314
- Référence fabricant:
- MJE200G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 boîte de 500 unités)*
191,00 €
(TVA exclue)
231,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 500 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | La Boite* |
|---|---|---|
| 500 - 500 | 0,382 € | 191,00 € |
| 1000 - 2000 | 0,312 € | 156,00 € |
| 2500 - 9500 | 0,31 € | 155,00 € |
| 10000 + | 0,308 € | 154,00 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-4314
- Référence fabricant:
- MJE200G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 10A | |
| Maximum Collector Emitter Voltage Vceo | 40V | |
| Package Type | TO-225 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 25V dc | |
| Maximum Power Dissipation Pd | 15W | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 10 | |
| Maximum Emitter Base Voltage VEBO | 8V dc | |
| Maximum Transition Frequency ft | 10MHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Standards/Approvals | No | |
| Width | 3.25mm | |
| Height | 27.1mm | |
| Series | MJE200 | |
| Length | 8mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 10A | ||
Maximum Collector Emitter Voltage Vceo 40V | ||
Package Type TO-225 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 25V dc | ||
Maximum Power Dissipation Pd 15W | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 10 | ||
Maximum Emitter Base Voltage VEBO 8V dc | ||
Maximum Transition Frequency ft 10MHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Standards/Approvals No | ||
Width 3.25mm | ||
Height 27.1mm | ||
Series MJE200 | ||
Length 8mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The Bipolar Power Transistor is designed for low voltage, low power and high gain audio amplifier applications. The MJE200 (NPN) and MJE210 (PNP) are complementary devices.
High DC Current Gain
Low Collector-Emitter Saturation Voltage
High Current-Gain - Bandwidth Product
Annular Construction for Low Leakage
These Devices are Pb-Free
Liens connexes
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