onsemi MJD44H11-1G Bipolar Transistor, 8 A NPN, 80 V dc, 4-Pin DPAK
- N° de stock RS:
- 184-4311
- Référence fabricant:
- MJD44H11-1G
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 75 unités)*
33,30 €
(TVA exclue)
40,275 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 29 mars 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le tube* |
|---|---|---|
| 75 - 675 | 0,444 € | 33,30 € |
| 750 - 1425 | 0,385 € | 28,88 € |
| 1500 + | 0,376 € | 28,20 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-4311
- Référence fabricant:
- MJD44H11-1G
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 8A | |
| Maximum Collector Emitter Voltage Vceo | 80V dc | |
| Package Type | TO-252 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 40 | |
| Maximum Power Dissipation Pd | 20W | |
| Maximum Transition Frequency ft | 1MHz | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Width | 6.22mm | |
| Standards/Approvals | No | |
| Length | 6.73mm | |
| Height | 2.38mm | |
| Series | MJD44H11 | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 8A | ||
Maximum Collector Emitter Voltage Vceo 80V dc | ||
Package Type TO-252 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 40 | ||
Maximum Power Dissipation Pd 20W | ||
Maximum Transition Frequency ft 1MHz | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Width 6.22mm | ||
Standards/Approvals No | ||
Length 6.73mm | ||
Height 2.38mm | ||
Series MJD44H11 | ||
Automotive Standard AEC-Q101 | ||
- Pays d'origine :
- MY
The Bipolar Power Transistor is designed for general purpose power and switching output or driver stages in applications such as switching regulators, converters and power amplifiers.
Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("-1" Suffix)
Lead Formed Version in 16 mm Tape and Reel for Surface Mount ("T4" Suffix)
Electrically Similar to Popular D44H/D45H Series
Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes
Fast Switching Speeds
Complementary Pairs Simplifies Designs
These Devices are Pb-Free
Liens connexes
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