onsemi BDV64BG Bipolar Transistor, -10 A PNP, -100 V, 3-Pin TO-218
- N° de stock RS:
- 184-4188
- Référence fabricant:
- BDV64BG
- Fabricant:
- onsemi
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 tube de 30 unités)*
61,20 €
(TVA exclue)
74,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- 360 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 120 | 2,04 € | 61,20 € |
| 150 - 270 | 1,70 € | 51,00 € |
| 300 + | 1,658 € | 49,74 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 184-4188
- Référence fabricant:
- BDV64BG
- Fabricant:
- onsemi
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | onsemi | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | TO-218 | |
| Mount Type | Through Hole | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 100V dc | |
| Minimum Operating Temperature | -65°C | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 1000 | |
| Maximum Power Dissipation Pd | 125W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Series | BDV64B | |
| Height | 41.91mm | |
| Standards/Approvals | No | |
| Length | 16.26mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque onsemi | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type TO-218 | ||
Mount Type Through Hole | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 100V dc | ||
Minimum Operating Temperature -65°C | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 1000 | ||
Maximum Power Dissipation Pd 125W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Series BDV64B | ||
Height 41.91mm | ||
Standards/Approvals No | ||
Length 16.26mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
The 10 A, 100 V NPN Bipolar Power Transistor is for use as an output devices in complementary general purpose amplifier applications. The BDV65B (NPN) and BDV64B (PNP) are complementary devices.
High DC Current Gain HFE = 1000 (min.) @ 5 Adc
Monolithic Construction with Built-in Base Emitter Shunt Resistors
These devices are available in Pb-free package(s). Specifications herein apply to both standard and Pb-free devices
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