Nexperia PHPT61010PYX Transistor, -10 A PNP, -100 V, 5-Pin SOT-669
- N° de stock RS:
- 153-0712
- Référence fabricant:
- PHPT61010PYX
- Fabricant:
- Nexperia
Sous-total (1500 unités, sur une bobine de 1500)*
466,50 €
(TVA exclue)
564,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 21 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | la bobine* |
|---|---|---|
| 1500 + | 0,311 € | 466,50 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 153-0712
- Référence fabricant:
- PHPT61010PYX
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | -10A | |
| Maximum Collector Emitter Voltage Vceo | -100V | |
| Package Type | SOT-669 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | -100V | |
| Maximum Emitter Base Voltage VEBO | -8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 25W | |
| Maximum Transition Frequency ft | 90MHz | |
| Transistor Polarity | PNP | |
| Minimum DC Current Gain hFE | 180 | |
| Maximum Operating Temperature | 175°C | |
| Pin Count | 5 | |
| Height | 1.05mm | |
| Standards/Approvals | RoHS | |
| Series | PHPT61010PY | |
| Width | 4.1mm | |
| Length | 5mm | |
| Automotive Standard | AEC-Q101 | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc -10A | ||
Maximum Collector Emitter Voltage Vceo -100V | ||
Package Type SOT-669 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO -100V | ||
Maximum Emitter Base Voltage VEBO -8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 25W | ||
Maximum Transition Frequency ft 90MHz | ||
Transistor Polarity PNP | ||
Minimum DC Current Gain hFE 180 | ||
Maximum Operating Temperature 175°C | ||
Pin Count 5 | ||
Height 1.05mm | ||
Standards/Approvals RoHS | ||
Series PHPT61010PY | ||
Width 4.1mm | ||
Length 5mm | ||
Automotive Standard AEC-Q101 | ||
Low VCEsat (BISS) power transistors single, Meeting the challenges of high efficiency operation, In high power systems, energy efficient operation can be just as important as for low power applications. By minimizing power consumption and heat dissipation, our BISS solutions help you meet this design challenge.
100 V, 10 A PNP high power bipolar transistor, PNP high power bipolar transistor in a SOT669 (LFPAK56) Surface-Mounted Device (SMD) power plastic package. NPN complement: PHPT61010NY.
High thermal power dissipation capability
Suitable for high temperature applications up to 175 °C
Reduced Printed-Circuit Board (PCB) requirements comparing to transistors in DPAK
High energy efficiency due to less heat generation
AEC-Q101 qualified
Power management
Load switch
Linear mode voltage regulator
Backlighting applications
Motor drive
Relay replacement
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