STMicroelectronics HSP031-1BM6 1-Element Bi-Directional ESD Protection Array, 300 kW, 6-Pin QFN
- N° de stock RS:
- 209-7617
- Référence fabricant:
- HSP031-1BM6
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 209-7617
- Référence fabricant:
- HSP031-1BM6
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | ESD Protection Array | |
| Direction Type | Bi-Directional | |
| Diode Configuration | Array | |
| Minimum Breakdown Voltage Vbr | 3.3V | |
| Mount Type | Surface | |
| Package Type | QFN | |
| Pin Count | 6 | |
| Peak Pulse Power Dissipation Pppm | 300kW | |
| Maximum Peak Pulse Current Ippm | 10A | |
| Minimum Operating Temperature | -55°C | |
| Clamping Voltage VC | 7V | |
| ESD Protection | Yes | |
| Maximum Operating Temperature | 150°C | |
| Number of Elements per Chip | 1 | |
| Height | 0.55mm | |
| Width | 1.05mm | |
| Standards/Approvals | No | |
| Length | 1.65mm | |
| Automotive Standard | No | |
| Maximum Reverse Leakage Current | 50nA | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type ESD Protection Array | ||
Direction Type Bi-Directional | ||
Diode Configuration Array | ||
Minimum Breakdown Voltage Vbr 3.3V | ||
Mount Type Surface | ||
Package Type QFN | ||
Pin Count 6 | ||
Peak Pulse Power Dissipation Pppm 300kW | ||
Maximum Peak Pulse Current Ippm 10A | ||
Minimum Operating Temperature -55°C | ||
Clamping Voltage VC 7V | ||
ESD Protection Yes | ||
Maximum Operating Temperature 150°C | ||
Number of Elements per Chip 1 | ||
Height 0.55mm | ||
Width 1.05mm | ||
Standards/Approvals No | ||
Length 1.65mm | ||
Automotive Standard No | ||
Maximum Reverse Leakage Current 50nA | ||
The STMicroelectronics HSP031-1BM6 is a single channel ESD array with a rail to rail architecture designed to protect 2 differential lines from over voltages event caused by ESD, surge (8/20 μs).Packaged in a QFN-6L, the device is designed specifically for the protection of high-speed differential lines such as Ethernet 10 Gbps.
High ESD protection level exceeding IEC 61000-4-2 level 4:
±30kV (contact discharge)
±30kV (air discharge)
High IEC 61000-4-5 surge capability: 10 A
Very low dynamic resistance: 0.25 Ohm
Low capacitance: 0.7 pF
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