Infineon Silicon Junction, Single, 75 A, 3-Pin 650 V TO-247
- N° de stock RS:
- 218-4378
- Référence fabricant:
- IDW75D65D1XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 tube de 30 unités)*
56,16 €
(TVA exclue)
67,95 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 75,00 €
En stock
- 180 unité(s) prête(s) à être expédiée(s) d'un autre centre de distribution
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Unité | Prix par unité | le tube* |
|---|---|---|
| 30 - 30 | 1,872 € | 56,16 € |
| 60 - 120 | 1,778 € | 53,34 € |
| 150 - 270 | 1,704 € | 51,12 € |
| 300 - 570 | 1,629 € | 48,87 € |
| 600 + | 1,516 € | 45,48 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 218-4378
- Référence fabricant:
- IDW75D65D1XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Diode Configuration | Single | |
| Product Type | Silicon Junction | |
| Maximum Forward Current If | 75A | |
| Sub Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Package Type | TO-247 | |
| Pin Count | 3 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 580A | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 650V | |
| Peak Reverse Recovery Time trr | 108ns | |
| Minimum Operating Temperature | -40°C | |
| Maximum Forward Voltage Vf | 1.35V | |
| Maximum Power Dissipation Pd | 326W | |
| Maximum Operating Temperature | 175°C | |
| Width | 5.21 mm | |
| Length | 16.13mm | |
| Series | D75ED1 | |
| Standards/Approvals | RoHS | |
| Height | 41.42mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Diode Configuration Single | ||
Product Type Silicon Junction | ||
Maximum Forward Current If 75A | ||
Sub Type Silicon Junction | ||
Mount Type Through Hole | ||
Package Type TO-247 | ||
Pin Count 3 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 580A | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 650V | ||
Peak Reverse Recovery Time trr 108ns | ||
Minimum Operating Temperature -40°C | ||
Maximum Forward Voltage Vf 1.35V | ||
Maximum Power Dissipation Pd 326W | ||
Maximum Operating Temperature 175°C | ||
Width 5.21 mm | ||
Length 16.13mm | ||
Series D75ED1 | ||
Standards/Approvals RoHS | ||
Height 41.42mm | ||
Automotive Standard No | ||
The Infineon Rapid 1 series switching emitter controller power silicon diode in dual anode configuration and in a TO-247 package, allowing design optimization for more compact dimensions, easier assembly and consequently lower costs. It is used in various applications like in telecom, UPS, welding, adapter, home appliance and air condition. It has forward current of 150 A.
1.35 V temperature-stable forward voltage
Highest softness-factor for ultimate softness and low EMI filtering
Low reverse recovery charge
Low reverse recovery current
For applications switching between 18 kHz and 40 kHz
Liens connexes
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