Infineon Silicon Junction, Single, 30 A, 2-Pin 1200 V TO-220 IDP30E120XKSA1
- N° de stock RS:
- 110-7168
- Référence fabricant:
- IDP30E120XKSA1
- Fabricant:
- Infineon
Offre groupée disponible
Consulter les options de prix de grosSous-total (1 paquet de 10 unités)*
14,28 €
(TVA exclue)
17,28 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 08 janvier 2027
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité | le paquet* |
|---|---|---|
| 10 - 10 | 1,428 € | 14,28 € |
| 20 - 90 | 0,882 € | 8,82 € |
| 100 - 190 | 0,86 € | 8,60 € |
| 200 - 490 | 0,839 € | 8,39 € |
| 500 + | 0,817 € | 8,17 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 110-7168
- Référence fabricant:
- IDP30E120XKSA1
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 30A | |
| Product Type | Silicon Junction | |
| Mount Type | Through Hole | |
| Sub Type | Silicon Junction | |
| Package Type | TO-220 | |
| Pin Count | 2 | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 102A | |
| Minimum Operating Temperature | -55°C | |
| Peak Reverse Recovery Time trr | 380ns | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Maximum Forward Voltage Vf | 2.15V | |
| Maximum Power Dissipation Pd | 138W | |
| Maximum Operating Temperature | 150°C | |
| Height | 15.95mm | |
| Standards/Approvals | No | |
| Length | 10.2mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Diode Configuration Single | ||
Maximum Forward Current If 30A | ||
Product Type Silicon Junction | ||
Mount Type Through Hole | ||
Sub Type Silicon Junction | ||
Package Type TO-220 | ||
Pin Count 2 | ||
Peak Non-Repetitive Forward Surge Current Ifsm 102A | ||
Minimum Operating Temperature -55°C | ||
Peak Reverse Recovery Time trr 380ns | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Maximum Forward Voltage Vf 2.15V | ||
Maximum Power Dissipation Pd 138W | ||
Maximum Operating Temperature 150°C | ||
Height 15.95mm | ||
Standards/Approvals No | ||
Length 10.2mm | ||
Automotive Standard No | ||
Fast Switching Emitter Controlled Diodes, Infineon
The Infineon switching emitter controlled diodes are the Rapid 1 and the Rapid 2 families also the 600 V/1200 V Ultra-soft diodes. The diodes work in various applications from Telecom, UPS, welding, AC-DC and the Ultra-soft version works on motor drive applications up to 30 kHz.
Rapid 1 diode switches between 18kHz and 40kHz
1.35V temperature-stable forward voltage
Ideal for Power Factor Correction (PFC) topologies
The Rapid 2 diode switches between 40 kHz and 100 kHz
Low reverse recovery charge: forward voltage ratio for BiC performance
Low reverse recovery time
Low turn-on losses on the boost switch
Ultra-fast Diode 600 V/1200 V Emitter Controlled technology
Qualified according to JEDEC Standard
Good EMI behaviour
Low conduction losses
Easy paralleling
Diodes and Rectifiers, Infineon
Liens connexes
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- IXYS Silicon Junction 30 A, 2-Pin 1200 V TO-220
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- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220
- IXYS Silicon Junction 8 A, 2-Pin 1200 V TO-220
- Infineon Silicon Junction 80 A, 2-Pin 650 V TO-220
- IXYS Silicon Junction 12 A, 2-Pin 1200 V TO-220 DSEP12-12B
- IXYS Silicon Junction 8 A, 2-Pin 1200 V TO-220 DSEP8-12A