Nexperia Silicon Junction, Single, 215 mA, 2-Pin 100 V SOD-523 BAS516,115
- N° de stock RS:
- 508-282
- Référence fabricant:
- BAS516,115
- Fabricant:
- Nexperia
Temporairement en rupture de stock
- N° de stock RS:
- 508-282
- Référence fabricant:
- BAS516,115
- Fabricant:
- Nexperia
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Nexperia | |
| Diode Configuration | Single | |
| Maximum Forward Current If | 215mA | |
| Product Type | Silicon Junction | |
| Sub Type | Silicon Junction | |
| Mount Type | Surface | |
| Package Type | SOD-523 | |
| Pin Count | 2 | |
| Maximum Power Dissipation Pd | 500mW | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 4A | |
| Minimum Operating Temperature | -65°C | |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 100V | |
| Peak Reverse Recovery Time trr | 4ns | |
| Maximum Forward Voltage Vf | 1.25V | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.25mm | |
| Standards/Approvals | No | |
| Series | BAS516 | |
| Height | 0.65mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque Nexperia | ||
Diode Configuration Single | ||
Maximum Forward Current If 215mA | ||
Product Type Silicon Junction | ||
Sub Type Silicon Junction | ||
Mount Type Surface | ||
Package Type SOD-523 | ||
Pin Count 2 | ||
Maximum Power Dissipation Pd 500mW | ||
Peak Non-Repetitive Forward Surge Current Ifsm 4A | ||
Minimum Operating Temperature -65°C | ||
Maximum Peak Reverse Repetitive Voltage Vrrm 100V | ||
Peak Reverse Recovery Time trr 4ns | ||
Maximum Forward Voltage Vf 1.25V | ||
Maximum Operating Temperature 150°C | ||
Length 1.25mm | ||
Standards/Approvals No | ||
Series BAS516 | ||
Height 0.65mm | ||
Automotive Standard No | ||
- Pays d'origine :
- CN
Fast switching. High speed switching diodes fabricated in planar technology with a maximum switching speed of 4 ns. Supports customized high density circuit designs encapsulated in hermetically sealed packaging.
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD) plastic packages.
High switching speed: trr ≤ 4 ns
Low capacitance
Low leakage current
Reverse voltage: VR ≤ 100 V
Repetitive peak reverse voltage: VRRM ≤ 100 V
Small SMD plastic packages
Target applications
High-speed switching
General-purpose switching
Liens connexes
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