Renesas Electronics SRAM Memory, R1LV0208BSA-5SI#B0- 2Mbit

Indisponible
RS n'aura plus ce produit en stock.
Options de conditionnement :
N° de stock RS:
901-5821
Référence fabricant:
R1LV0208BSA-5SI#B0
Fabricant:
Renesas Electronics
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Marque

Renesas Electronics

Memory Size

2Mbit

Organisation

256K x 8 bit

Number of Words

256K

Number of Bits per Word

8bit

Maximum Random Access Time

55ns

Address Bus Width

8bit

Clock Frequency

1MHz

Low Power

Yes

Mounting Type

Surface Mount

Package Type

TSOP

Pin Count

32

Dimensions

11.9 x 8.1 x 1mm

Maximum Operating Supply Voltage

3.6 V

Height

1mm

Length

11.9mm

Minimum Operating Temperature

-40 °C

Maximum Operating Temperature

+85 °C

Minimum Operating Supply Voltage

2.7 V

Width

8.1mm

Pays d'origine :
JP

Low Power SRAM, R1LV Series, Renesas Electronics


The R1LV Series of advanced low voltage static RAMs is suitable for memory applications where a simple interfacing, battery operating and battery backup are the important design objectives.

Single 2.7V to 3.6V power supply
Small stand-by current
No clocks, No refresh required
All inputs and outputs are TTL compatible
Three-state outputs: OR-tie Capability


SRAM (Static Random Access Memory)

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