Renesas Electronics SRAM, R1RW0416DGE-2PR#B0- 4Mbit

Voir l’ensemble des SRAM
Indisponible
RS n'aura plus ce produit en stock.
N° de stock RS:
901-5770
Référence fabricant:
R1RW0416DGE-2PR#B0
Fabricant:
Renesas Electronics
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Marque

Renesas Electronics

Memory Size

4Mbit

Organisation

256K x 16 bit

Number of Words

256K

Number of Bits per Word

16bit

Maximum Random Access Time

12ns

Address Bus Width

16bit

Clock Frequency

1MHz

Low Power

Yes

Mounting Type

Surface Mount

Package Type

SOJ

Pin Count

44

Dimensions

28.7 x 10.29 x 2.75mm

Height

2.75mm

Maximum Operating Supply Voltage

5.5 V

Maximum Operating Temperature

+70 °C

Length

28.7mm

Width

10.29mm

Minimum Operating Supply Voltage

4.5 V

Minimum Operating Temperature

0 °C

Pays d'origine :
CN

Low Power SRAM, R1RW Series, Renesas Electronics


The R1RW Series is a static RAM most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system.

Single 3.3V power supply
Access time 10ns / 12ns
No clock or timing strobe required
Equal access and cycle times
All inputs and outputs are TTL compatible


SRAM (Static Random Access Memory)

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