Infineon SRAM, CY62147EV30LL-45ZSXI- 4 MB
- N° de stock RS:
- 273-7338
- Référence fabricant:
- CY62147EV30LL-45ZSXI
- Fabricant:
- Infineon
Offre groupée disponible
Sous-total (1 plateau de 135 unités)*
434,295 €
(TVA exclue)
525,555 €
(TVA incluse)
Ajouter 135 unités pour bénéficier d'une livraison gratuite
En stock
- Plus 1 215 unité(s) expédiée(s) à partir du 23 février 2026
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Unité | Prix par unité | le plateau* |
|---|---|---|
| 135 - 135 | 3,217 € | 434,30 € |
| 270 + | 3,131 € | 422,69 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 273-7338
- Référence fabricant:
- CY62147EV30LL-45ZSXI
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Product Type | SRAM | |
| Memory Size | 4MB | |
| Organisation | 256k x 16 | |
| Number of Words | 256K | |
| Number of Bits per Word | 16 | |
| Minimum Supply Voltage | 0.3V | |
| Maximum Supply Voltage | 3.9V | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Package Type | TSOP II | |
| Maximum Operating Temperature | 85°C | |
| Pin Count | 44 | |
| Width | 1.19 mm | |
| Series | CY62147EV30 | |
| Standards/Approvals | RoHS | |
| Height | 10.26mm | |
| Length | 18.51mm | |
| Automotive Standard | No | |
| Supply Current | 20mA | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Product Type SRAM | ||
Memory Size 4MB | ||
Organisation 256k x 16 | ||
Number of Words 256K | ||
Number of Bits per Word 16 | ||
Minimum Supply Voltage 0.3V | ||
Maximum Supply Voltage 3.9V | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Package Type TSOP II | ||
Maximum Operating Temperature 85°C | ||
Pin Count 44 | ||
Width 1.19 mm | ||
Series CY62147EV30 | ||
Standards/Approvals RoHS | ||
Height 10.26mm | ||
Length 18.51mm | ||
Automotive Standard No | ||
Supply Current 20mA | ||
The Infineon Static RAM is a high performance CMOS static RAM organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. Ultra low active current is ideal for providing more battery life in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99 percent when deselected.
Very high speed
Ultra low active power
Easy memory expansion
Byte power down feature
CMOS for optimum speed and power
Automatic power down when deselected
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