Cypress Semiconductor, CY7C1061GN30-10ZS
- N° de stock RS:
- 194-8926
- Référence fabricant:
- CY7C1061GN30-10ZSXI
- Fabricant:
- Infineon
Informations sur le stock actuellement non accessibles
- N° de stock RS:
- 194-8926
- Référence fabricant:
- CY7C1061GN30-10ZSXI
- Fabricant:
- Infineon
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Infineon | |
| Memory Size | 16Mbit | |
| Organisation | 1M x 16 | |
| Number of Bits per Word | 16bit | |
| Maximum Random Access Time | 10ns | |
| Sélectionner tout | ||
|---|---|---|
Marque Infineon | ||
Memory Size 16Mbit | ||
Organisation 1M x 16 | ||
Number of Bits per Word 16bit | ||
Maximum Random Access Time 10ns | ||
The Cypress Semiconductor CY7C1061GN/CY7C10612GN is a high performance CMOS static RAM organized as 1,048,576 words by 16 bits. The input or output pins are placed in a high impedance state when the device is deselected, the outputs are disabled, the BHE and BLE are disabled, or during a write operation.
High speed typically of 10 ns
Low active power
Automatic power down when deselected
TTL compatible inputs and outputs
Offered in dual chip enable options
Low active power
Automatic power down when deselected
TTL compatible inputs and outputs
Offered in dual chip enable options
Liens connexes
- Cypress Semiconductor, CY7C1061GN30-10ZS
- Cypress Semiconductor, CY7C1049G30-10ZSX
- Cypress Semiconductor, CY7C1021CV33-10ZS
- Cypress Semiconductor SRAM Memory, CY7C1011DV33-10ZSXI- 2Mbit
- Cypress Semiconductor, CY7C1361C-133AXI
- Cypress Semiconductor, CY7C1354C-166AXI
- Cypress Semiconductor, CY7C1345G-100AXC
- Cypress Semiconductor, CY7C1399BN-12VXI
