Infineon SRAM- 16 MB

Sous-total (1 plateau de 108 unités)*

3 140,64 €

(TVA exclue)

3 800,52 €

(TVA incluse)

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  • Expédition à partir du 12 juin 2026
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Unité
Prix par unité
le plateau*
108 +29,08 €3 140,64 €

*Prix donné à titre indicatif

N° de stock RS:
181-7451
Référence fabricant:
CY7C1061GE30-10ZSXI
Fabricant:
Infineon
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Marque

Infineon

Product Type

SRAM

Memory Size

16MB

Organisation

1M x 16 Bit

Number of Words

1M

Number of Bits per Word

16

Maximum Random Access Time

10ns

Address Bus Width

16bit

Maximum Clock Frequency

100MHz

Timing Type

Asynchronous

Minimum Supply Voltage

2.2V

Mount Type

Surface

Maximum Supply Voltage

3.6V

Package Type

TSOP

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

85°C

Pin Count

54

Series

CY7C1061GE

Standards/Approvals

No

Length

22.51mm

Height

1.05mm

Width

10.26 mm

Supply Current

110mA

Automotive Standard

No

CY7C1061G and CY7C1061GE are high-performance CMOS fast static RAM devices with embedded ECC. Both devices are offered in single and dual chip enable options and in multiple pin configurations. The CY7C1061GE device includes an ERR pin that signals a single-bit error-detection and correction event during a read cycle.

High speed

tAA = 10 ns/15 ns

Embedded error-correcting code (ECC) for single-bit error

correction[1, 2]

Low active and standby currents

ICC = 90 mA typical at 100 MHz

ISB2 = 20 mA typical

Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and

4.5 V to 5.5 V

1.0 V data retention

Transistor-transistor logic (TTL) compatible inputs and outputs

Error indication (ERR) pin to indicate 1-bit error detection and correction

Available in Pb-free 48-pin TSOP I, 54-pin TSOP II, and 48-ball VFBGA packages

Liens connexes

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