ISSI SRAM, IS61WV25616BLL-10TLI-TR- 256 kB
- N° de stock RS:
- 648-089
- Référence fabricant:
- IS61WV25616BLL-10TLI-TR
- Fabricant:
- ISSI
Sous-total (1 unité)*
3,39 €
(TVA exclue)
4,10 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- 1 000 unité(s) expédiée(s) à partir du 17 décembre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 1 + | 3,39 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 648-089
- Référence fabricant:
- IS61WV25616BLL-10TLI-TR
- Fabricant:
- ISSI
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | ISSI | |
| Memory Size | 256kB | |
| Product Type | SRAM | |
| Organisation | 256 K x 16 | |
| Number of Words | 262144 | |
| Number of Bits per Word | 16 | |
| Maximum Random Access Time | 10ns | |
| Minimum Supply Voltage | 2.4V | |
| Timing Type | Asynchronous | |
| Maximum Supply Voltage | 3.6V | |
| Mount Type | Surface | |
| Minimum Operating Temperature | -40°C | |
| Package Type | TSOP | |
| Pin Count | 44 | |
| Maximum Operating Temperature | 85°C | |
| Height | 1mm | |
| Length | 18.54mm | |
| Series | IS61WV25616BLL | |
| Width | 11.96mm | |
| Automotive Standard | No | |
| Supply Current | 60mA | |
| Sélectionner tout | ||
|---|---|---|
Marque ISSI | ||
Memory Size 256kB | ||
Product Type SRAM | ||
Organisation 256 K x 16 | ||
Number of Words 262144 | ||
Number of Bits per Word 16 | ||
Maximum Random Access Time 10ns | ||
Minimum Supply Voltage 2.4V | ||
Timing Type Asynchronous | ||
Maximum Supply Voltage 3.6V | ||
Mount Type Surface | ||
Minimum Operating Temperature -40°C | ||
Package Type TSOP | ||
Pin Count 44 | ||
Maximum Operating Temperature 85°C | ||
Height 1mm | ||
Length 18.54mm | ||
Series IS61WV25616BLL | ||
Width 11.96mm | ||
Automotive Standard No | ||
Supply Current 60mA | ||
The ISSI 4Mb Async SRAM is a high-speed 4194304-bit static RAM organized as 262144 words by 16 bits, fabricated using high-performance CMOS technology. This combination of Advanced process and circuit design ensures high reliability, low power consumption, and superior performance. When the chip enable CE is HIGH, the device enters standby mode, significantly reducing power dissipation with CMOS input levels.
Fully static operation: no clock or refresh required
Three state outputs
Data control for upper and lower bytes
Industrial and Automotive temperature support
Lead-free available