Winbond SDRAM 256 MB Surface, 66-Pin 16 bit TSOP
- N° de stock RS:
- 188-2575
- Référence fabricant:
- W9425G6KH-5I
- Fabricant:
- Winbond
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau en stock, il n'est plus vendu par le fabricant.
- N° de stock RS:
- 188-2575
- Référence fabricant:
- W9425G6KH-5I
- Fabricant:
- Winbond
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Winbond | |
| Product Type | SDRAM | |
| Memory Size | 256MB | |
| Data Bus Width | 16bit | |
| Address Bus Width | 15bit | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 55ns | |
| Number of Words | 32M | |
| Mount Type | Surface | |
| Package Type | TSOP | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 66 | |
| Maximum Operating Temperature | 85°C | |
| Standards/Approvals | RoHS | |
| Height | 1.05mm | |
| Length | 22.35mm | |
| Series | W9425G6KH | |
| Minimum Supply Voltage | 2.3V | |
| Automotive Standard | No | |
| Maximum Supply Voltage | 2.7V | |
| Sélectionner tout | ||
|---|---|---|
Marque Winbond | ||
Product Type SDRAM | ||
Memory Size 256MB | ||
Data Bus Width 16bit | ||
Address Bus Width 15bit | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 55ns | ||
Number of Words 32M | ||
Mount Type Surface | ||
Package Type TSOP | ||
Minimum Operating Temperature -40°C | ||
Pin Count 66 | ||
Maximum Operating Temperature 85°C | ||
Standards/Approvals RoHS | ||
Height 1.05mm | ||
Length 22.35mm | ||
Series W9425G6KH | ||
Minimum Supply Voltage 2.3V | ||
Automotive Standard No | ||
Maximum Supply Voltage 2.7V | ||
The W9425G6KH is a 256M DDR SDRAM and speed involving -4/-5/-5I/-5A.
Up to 250 MHz Clock Frequency
Double Data Rate architecture, two data transfers per clock cycle
Differential clock inputs (CLK and /CLK)
DQS is edge-aligned with data for Read, center-aligned with data for Write
CAS Latency: 2, 2.5, and 3
Burst Length: 2, 4 and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power Down
Write Data Mask
Write Latency = 1
7.8μS refresh interval (8K/64 mS refresh)
Maximum burst refresh cycle: 8
Interface: SSTL_2
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