Intelligent Memory IM8G08D3FFBG-107 SDRAM 8 GB Surface, 78-Pin 16 bit FBGA-78 Ball
- N° de stock RS:
- 588-647
- Référence fabricant:
- IM8G08D3FFBG-107
- Fabricant:
- Intelligent Memory
Sous-total (1 unité)*
28,38 €
(TVA exclue)
34,34 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
En stock
- Plus 20 unité(s) expédiée(s) à partir du 13 avril 2026
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Unité | Prix par unité |
|---|---|
| 1 + | 28,38 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 588-647
- Référence fabricant:
- IM8G08D3FFBG-107
- Fabricant:
- Intelligent Memory
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Intelligent Memory | |
| Memory Size | 8GB | |
| Product Type | SDRAM | |
| Data Bus Width | 16bit | |
| Number of Bits per Word | 8 | |
| Maximum Clock Frequency | 933MHz | |
| Maximum Random Access Time | 1.07ns | |
| Number of Words | 128 | |
| Mount Type | Surface | |
| Package Type | FBGA-78 Ball | |
| Minimum Operating Temperature | -40°C | |
| Pin Count | 78 | |
| Maximum Operating Temperature | 95°C | |
| Length | 10.6mm | |
| Standards/Approvals | RoHS | |
| Minimum Supply Voltage | 1.283V | |
| Maximum Supply Voltage | 1.45V | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Intelligent Memory | ||
Memory Size 8GB | ||
Product Type SDRAM | ||
Data Bus Width 16bit | ||
Number of Bits per Word 8 | ||
Maximum Clock Frequency 933MHz | ||
Maximum Random Access Time 1.07ns | ||
Number of Words 128 | ||
Mount Type Surface | ||
Package Type FBGA-78 Ball | ||
Minimum Operating Temperature -40°C | ||
Pin Count 78 | ||
Maximum Operating Temperature 95°C | ||
Length 10.6mm | ||
Standards/Approvals RoHS | ||
Minimum Supply Voltage 1.283V | ||
Maximum Supply Voltage 1.45V | ||
Automotive Standard AEC-Q100 | ||
- Pays d'origine :
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling
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