Intelligent Memory IME1G16D3EEBG-15EI SDRAM 1 GB Surface, 96-Pin 16 bit FBGA-96 Ball
- N° de stock RS:
- 588-643
- Référence fabricant:
- IME1G16D3EEBG-15EI
- Fabricant:
- Intelligent Memory
Actuellement indisponible
Désolés, nous ne savons pas quand ce produit sera réapprovisionné.
- N° de stock RS:
- 588-643
- Référence fabricant:
- IME1G16D3EEBG-15EI
- Fabricant:
- Intelligent Memory
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | Intelligent Memory | |
| Memory Size | 1GB | |
| Product Type | SDRAM | |
| Data Bus Width | 16bit | |
| Maximum Clock Frequency | 800MHz | |
| Number of Bits per Word | 72 | |
| Maximum Random Access Time | 1.25ns | |
| Number of Words | 16777216 | |
| Mount Type | Surface | |
| Package Type | FBGA-96 Ball | |
| Pin Count | 96 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 95°C | |
| Series | IME1G(08/16)D3EEB | |
| Standards/Approvals | JEDEC, RoHS | |
| Length | 10.5mm | |
| Minimum Supply Voltage | 1.425V | |
| Maximum Supply Voltage | 1.575V | |
| Automotive Standard | AEC-Q100 | |
| Sélectionner tout | ||
|---|---|---|
Marque Intelligent Memory | ||
Memory Size 1GB | ||
Product Type SDRAM | ||
Data Bus Width 16bit | ||
Maximum Clock Frequency 800MHz | ||
Number of Bits per Word 72 | ||
Maximum Random Access Time 1.25ns | ||
Number of Words 16777216 | ||
Mount Type Surface | ||
Package Type FBGA-96 Ball | ||
Pin Count 96 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 95°C | ||
Series IME1G(08/16)D3EEB | ||
Standards/Approvals JEDEC, RoHS | ||
Length 10.5mm | ||
Minimum Supply Voltage 1.425V | ||
Maximum Supply Voltage 1.575V | ||
Automotive Standard AEC-Q100 | ||
- Pays d'origine :
- TW
The Intelligent Memory Double Data Rate (DDR) DRAM offers higher module density, faster data transmission speeds, and lower voltage requirements compared to DDR3 devices. It also supports data masking per byte on write commands, enhancing data management and reliability.
Programmable burst length and CAS latency
Auto refresh and self refresh
Write leveling