STMicroelectronics 1200 V 10 A Diode 3-Pin DPAK
- N° de stock RS:
- 210-8744P
- Référence fabricant:
- STPSC10H12B2-TR
- Fabricant:
- STMicroelectronics
Offre groupée disponible
Sous-total 50 unités (conditionné en bande continue)*
187,50 €
(TVA exclue)
227,00 €
(TVA incluse)
Frais de livraison offerts pour toute commande de plus de 90,00 €
Temporairement en rupture de stock
- Expédition à partir du 26 octobre 2026
Besoin de plus? Cliquez sur " Vérifier les dates de livraison " pour plus de détails
Unité | Prix par unité |
|---|---|
| 50 - 98 | 3,75 € |
| 100 - 248 | 3,10 € |
| 250 + | 3,065 € |
*Prix donné à titre indicatif
- N° de stock RS:
- 210-8744P
- Référence fabricant:
- STPSC10H12B2-TR
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
Recherchez des produits similaires en sélectionnant un ou plusieurs attributs.
Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Surface | |
| Product Type | Diode | |
| Package Type | TO-252 | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1200V | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 30μA | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 60A | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Height | 2.2mm | |
| Length | 9.35mm | |
| Standards/Approvals | RoHS | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Surface | ||
Product Type Diode | ||
Package Type TO-252 | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1200V | ||
Pin Count 3 | ||
Peak Reverse Current Ir 30μA | ||
Peak Non-Repetitive Forward Surge Current Ifsm 60A | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Height 2.2mm | ||
Length 9.35mm | ||
Standards/Approvals RoHS | ||
Automotive Standard No | ||
The STMicroelectronics 10A, 1200V SiC diode is an ultra-high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 1200 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature.
No or negligible reverse recovery
Switching behavior independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C
Low VF
DPAK HV creepage distance (anode to cathode) = 3 mm min.
ECOPACK2 compliant