STMicroelectronics 650 V 10 A Diode 2-Pin PowerFLAT STPSC10H065DLF

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N° de stock RS:
203-3485
Référence fabricant:
STPSC10H065DLF
Fabricant:
STMicroelectronics
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Marque

STMicroelectronics

Mount Type

Surface

Product Type

Diode

Package Type

PowerFLAT

Maximum Continuous Forward Current If

10A

Peak Reverse Repetitive Voltage Vrrm

650V

Diode Configuration

Single

Pin Count

2

Minimum Operating Temperature

-40°C

Maximum Forward Voltage Vf

1.95V

Peak Reverse Current Ir

85μA

Peak Non-Repetitive Forward Surge Current Ifsm

850A

Maximum Operating Temperature

175°C

Length

7.9mm

Width

7.9 mm

Standards/Approvals

RoHS

Height

0.75mm

Automotive Standard

No

Pays d'origine :
CN
The STMicroelectronics SiC diode is an ultra-high performance power Schottky diode, manufactured using a silicon carbide substrate. It has a wide band gap material that allows the design of a Schottky diode structure with a 650 V rating. No recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature, due to the schottky construction.

Less than 1 mm height package

High creep age package

No or negligible reverse recovery

Temperature independent switching behaviour

High forward surge capability

Very low drop forward voltage

Power efficient product

ECOPACK2 compliant component

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