STMicroelectronics 25 V 2 A Diode Schottky 2-Pin SMA STPS2L25AFN
- N° de stock RS:
- 203-3469P
- Référence fabricant:
- STPS2L25AFN
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 203-3469P
- Référence fabricant:
- STPS2L25AFN
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Product Type | Diode | |
| Mount Type | Surface | |
| Package Type | SMA | |
| Maximum Continuous Forward Current If | 2A | |
| Peak Reverse Repetitive Voltage Vrrm | 25V | |
| Diode Configuration | Single | |
| Series | STPS2L25 | |
| Rectifier Type | Schottky | |
| Pin Count | 2 | |
| Peak Reverse Current Ir | 30mA | |
| Maximum Forward Voltage Vf | 0.33V | |
| Minimum Operating Temperature | -65°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 90A | |
| Maximum Operating Temperature | 175°C | |
| Length | 4.6mm | |
| Height | 1.1mm | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Product Type Diode | ||
Mount Type Surface | ||
Package Type SMA | ||
Maximum Continuous Forward Current If 2A | ||
Peak Reverse Repetitive Voltage Vrrm 25V | ||
Diode Configuration Single | ||
Series STPS2L25 | ||
Rectifier Type Schottky | ||
Pin Count 2 | ||
Peak Reverse Current Ir 30mA | ||
Maximum Forward Voltage Vf 0.33V | ||
Minimum Operating Temperature -65°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 90A | ||
Maximum Operating Temperature 175°C | ||
Length 4.6mm | ||
Height 1.1mm | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The STMicroelectronics single Schottky rectifier suited to switched mode power supplies and high frequency DC to DC converters. It is packaged in SMB, SMB flat for thermal resistance characteristic improvement, this device is especially intended for use in parallel with MOSFETs in synchronous rectification.
Very low forward voltage drop for less power dissipation
Avalanche capability specified
Optimized conduction and reverse losses trade-off which means the highest efficiency in the applications
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