STMicroelectronics 1.2 kV 10 A Diode Schottky 3-Pin TO-247 LL STPSC20H12CWL
- N° de stock RS:
- 201-0865P
- Référence fabricant:
- STPSC20H12CWL
- Fabricant:
- STMicroelectronics
Actuellement indisponible
Nous ne savons pas si cet article sera de nouveau disponible. RS a l'intention de le retirer de son assortiment sous peu.
- N° de stock RS:
- 201-0865P
- Référence fabricant:
- STPSC20H12CWL
- Fabricant:
- STMicroelectronics
Spécifications
Documentation technique
Législations et de normes
Détails du produit
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Sélectionner tout | Attribut | Valeur |
|---|---|---|
| Marque | STMicroelectronics | |
| Mount Type | Through Hole | |
| Product Type | Diode | |
| Package Type | TO-247 LL | |
| Maximum Continuous Forward Current If | 10A | |
| Peak Reverse Repetitive Voltage Vrrm | 1.2kV | |
| Series | STPSC20H12C | |
| Rectifier Type | Schottky | |
| Pin Count | 3 | |
| Peak Reverse Current Ir | 30μA | |
| Maximum Forward Voltage Vf | 2.25V | |
| Minimum Operating Temperature | -40°C | |
| Peak Non-Repetitive Forward Surge Current Ifsm | 420A | |
| Maximum Operating Temperature | 175°C | |
| Diameter | 3.55mm | |
| Standards/Approvals | No | |
| Width | 15.77mm | |
| Length | 40.82mm | |
| Height | 4.9mm | |
| Automotive Standard | No | |
| Sélectionner tout | ||
|---|---|---|
Marque STMicroelectronics | ||
Mount Type Through Hole | ||
Product Type Diode | ||
Package Type TO-247 LL | ||
Maximum Continuous Forward Current If 10A | ||
Peak Reverse Repetitive Voltage Vrrm 1.2kV | ||
Series STPSC20H12C | ||
Rectifier Type Schottky | ||
Pin Count 3 | ||
Peak Reverse Current Ir 30μA | ||
Maximum Forward Voltage Vf 2.25V | ||
Minimum Operating Temperature -40°C | ||
Peak Non-Repetitive Forward Surge Current Ifsm 420A | ||
Maximum Operating Temperature 175°C | ||
Diameter 3.55mm | ||
Standards/Approvals No | ||
Width 15.77mm | ||
Length 40.82mm | ||
Height 4.9mm | ||
Automotive Standard No | ||
The STMicroelectronics 1200V power schottky silicon carbide diode is an ultrahigh performance power schottky rectifier. It is manufactured using a silicon carbide substrate. This rectifier will enhance the performance of the targeted application. Its high forward surge capability.
No or negligible reverse recovery
Switching behaviour independent of temperature
Robust high voltage periphery
Operating Tj from -40 °C to 175 °C