onsemi 650 V 9.1 A Schottky Diode Schottky 3-Pin DPAK

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N° de stock RS:
195-8713
Référence fabricant:
FFSD0665B-F085
Fabricant:
onsemi
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Marque

onsemi

Mount Type

Surface

Product Type

Schottky Diode

Package Type

TO-252

Maximum Continuous Forward Current If

9.1A

Peak Reverse Repetitive Voltage Vrrm

650V

Series

EliteSiC

Diode Configuration

Single

Rectifier Type

Schottky

Pin Count

3

Maximum Forward Voltage Vf

2.4V

Minimum Operating Temperature

-55°C

Peak Non-Repetitive Forward Surge Current Ifsm

28A

Peak Reverse Current Ir

160A

Maximum Operating Temperature

175°C

Standards/Approvals

Pb-Free, RoHS

Width

6.22 mm

Length

6.73mm

Height

2.39mm

Automotive Standard

AEC-Q101

Silicon Carbide (SiC) Schottky Diode - EliteSiC, 6A, 650V, D2, DPAK


Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency,increased power density, reduced EMI, and reduced system size & cost.

Max Junction Temperature 175 °C

PPAP capable

High Surge Current Capacity

Positive Temperature Coefficient

Ease of Paralleling

No Reverse Recovery / No Forward Recovery

Applications

Automotive HEV-EV Onboard Chargers

Automotive HEV-EV DC-DC Converters

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